Manufacturer Part Number
CSD17579Q5A
Manufacturer
Texas Instruments
Introduction
High-performance N-channel NexFET MOSFET
Product Features and Performance
Excellent on-resistance and gate charge characteristics
High current capability up to 25A
Low input capacitance of 1030 pF
Wide operating temperature range of -55°C to 150°C
Product Advantages
Efficient power conversion
Compact design
Robust performance
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
Maximum Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 9.7 mΩ @ 8A, 10V
Continuous Drain Current (Id): 25A @ 25°C
Input Capacitance (Ciss): 1030 pF @ 15V
Power Dissipation: 3.1W @ 25°C, 36W @ case temperature
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Compatible with various power management and conversion applications
Application Areas
Switch-mode power supplies
DC-DC converters
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
This product is currently in production and not nearing discontinuation.
Replacement or upgrade options may be available from Texas Instruments.
Key Reasons to Choose This Product
Excellent performance and efficiency
High current capability and low on-resistance
Wide operating temperature range
Compact and robust design
Compatibility with various power management applications
Reliable and RoHS3 compliant
CSD18502KCSTexas InstrumentsMOSFET N-CH 40V 100A TO220-3