Manufacturer Part Number
CSD17579Q5AT
Manufacturer
Texas Instruments
Introduction
High-performance N-channel NexFET power MOSFET for power management and conversion applications
Product Features and Performance
30V drain-source voltage
7mΩ maximum on-resistance
25A continuous drain current at 25°C
-55°C to 150°C operating temperature range
Low gate charge and input capacitance for high-frequency switching
Product Advantages
Excellent power density and efficiency
Improved thermal performance
Optimized for high-frequency power conversion
Key Technical Parameters
Drain-source voltage (Vdss): 30V
Maximum gate-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 9.7mΩ
Continuous drain current (Id): 25A
Input capacitance (Ciss): 1030pF
Power dissipation (Ptot): 3.1W (Ta), 36W (Tc)
Quality and Safety Features
Compliant with RoHS 3 directive
8-PowerTDFN package for improved thermal performance
Compatibility
Suitable for a wide range of power management and conversion applications
Application Areas
Switching power supplies
DC-DC converters
Motor drives
Telecommunications equipment
Industrial automation
Product Lifecycle
This product is currently in production and is not nearing discontinuation.
Replacements and upgrades may be available in the future as technology advances.
Key Reasons to Choose This Product
Excellent power density and efficiency for high-frequency power conversion
Improved thermal performance for better reliability and longer lifespan
Optimized for high-frequency switching applications
Wide operating temperature range of -55°C to 150°C
RoHS 3 compliance for environmental responsibility
CSD18502KCSTexas InstrumentsMOSFET N-CH 40V 100A TO220-3