Manufacturer Part Number
CSD17578Q3AT
Manufacturer
Texas Instruments
Introduction
N-channel MOSFET transistor
Part of the NexFET series
Product Features and Performance
30V drain-to-source voltage
20A continuous drain current
3mΩ maximum on-resistance
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 1590pF
Maximum power dissipation of 3.2W (Ta) and 37W (Tc)
Product Advantages
Excellent efficiency and power density
High current handling capability
Low on-resistance for reduced power losses
Compact 8-VSONP (3x3.3) package
Key Technical Parameters
MOSFET technology
N-channel FET type
20V maximum gate-to-source voltage
9V maximum gate threshold voltage
2nC maximum gate charge
Quality and Safety Features
RoHS3 compliant
Suitable for surface mount applications
Compatibility
Compatible with a variety of electronic circuits and systems
Application Areas
Suitable for power management, motor control, and other power conversion applications
Product Lifecycle
Currently in production
Replacement or upgrade options may be available in the future
Key Reasons to Choose This Product
Excellent efficiency and power density for improved system performance
High current handling capability for demanding applications
Low on-resistance for reduced power losses and improved energy efficiency
Wide operating temperature range for versatile use in various environments
Compact and surface-mountable package for space-constrained designs
