Manufacturer Part Number
CSD18509Q5BT
Manufacturer
Texas Instruments
Introduction
High-performance N-channel MOSFET transistor for power management and conversion applications.
Product Features and Performance
Low on-resistance (RDS(on)) of 1.2 milliohms
High continuous drain current (ID) of 100A
Wide operating temperature range of -55°C to 150°C
Low gate charge (Qg) of 195 nC
High input capacitance (Ciss) of 13900 pF
Product Advantages
Excellent power efficiency and thermal performance
Suitable for high-power applications
Robust design and reliability
Key Technical Parameters
Drain-to-Source Voltage (VDS): 40V
Gate-to-Source Voltage (VGS): ±20V
On-Resistance (RDS(on)): 1.2 milliohms
Continuous Drain Current (ID): 100A
Input Capacitance (Ciss): 13900 pF
Power Dissipation (PD): 3.1W (Ta), 195W (Tc)
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature and high-power applications
Compatibility
Surface mount package (8-VSON-CLIP 5x6)
Application Areas
Power management and conversion
Motor drives
Voltage regulators
Switching power supplies
Product Lifecycle
Current product, no indication of discontinuation
Replacements and upgrades may be available from Texas Instruments
Key Reasons to Choose
Excellent power efficiency and thermal performance
High current handling capability
Robust and reliable design
Suitable for a wide range of high-power applications
