Manufacturer Part Number
CSD18513Q5A
Manufacturer
Texas Instruments
Introduction
High-performance N-channel NexFET power MOSFET
Product Features and Performance
40V drain-to-source voltage
Ultra-low on-resistance of 5.3mΩ
Continuous drain current up to 124A
Fast switching speed
Low gate charge of 61nC
Compact 8-VSONP (5x6) package
Product Advantages
Excellent thermal performance
High power density
Efficient power conversion
Reliable operation
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 40V
Maximum Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 5.3mΩ
Continuous Drain Current (Id): 124A
Input Capacitance (Ciss): 4280pF
Power Dissipation (Tc): 96W
Quality and Safety Features
RoHS3 compliant
Suitable for harsh environments (-55°C to 150°C)
Compatibility
Designed for a wide range of power conversion applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Synchronous rectifiers
Industrial and consumer electronics
Product Lifecycle
This product is actively supported by Texas Instruments and is not nearing discontinuation.
Several Key Reasons to Choose This Product
Excellent power efficiency and thermal performance
Compact, surface-mount package for high-density designs
Reliable operation in harsh environments
Versatile compatibility for various power conversion applications
Backed by the technical expertise and support of Texas Instruments