Manufacturer Part Number
CSD18533Q5AT
Manufacturer
Texas Instruments
Introduction
High-performance N-channel MOSFET transistor designed for power management and control applications.
Product Features and Performance
60V drain-source voltage rating
9 mΩ maximum on-resistance at 18A, 10V
17A continuous drain current at 25°C ambient temperature
100A continuous drain current at 25°C case temperature
2750 pF maximum input capacitance at 30V
2W maximum power dissipation at 25°C ambient temperature
116W maximum power dissipation at 25°C case temperature
-55°C to 150°C operating temperature range
Product Advantages
Extremely low on-resistance for high efficiency
High current handling capability
Compact 8-VSONP (5x6) package
Suitable for high-frequency, high-power density applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 60V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 5.9 mΩ @ 18A, 10V
Drain Current (Id): 17A (ambient), 100A (case)
Input Capacitance (Ciss): 2750 pF @ 30V
Power Dissipation: 3.2W (ambient), 116W (case)
Quality and Safety Features
RoHS3 compliant
MOSFET technology for reliable operation
Compatibility
Suitable for use in power management, motor control, and other high-power switching applications
Application Areas
Power supplies
Motor drives
Industrial automation
Telecommunications equipment
Automotive electronics
Product Lifecycle
This product is an active and widely used MOSFET solution from Texas Instruments.
Replacement or upgraded products may become available in the future as technology advances.
Key Reasons to Choose This Product
Excellent efficiency due to extremely low on-resistance
High current handling capability for demanding applications
Compact package size for space-constrained designs
Wide operating temperature range for robust performance
Reliable MOSFET technology from a trusted manufacturer