Manufacturer Part Number
CSD18535KTT
Manufacturer
Texas Instruments
Introduction
High-performance, N-channel NexFET power MOSFET with low on-resistance and high current capability.
Product Features and Performance
Extremely low on-resistance of 2 mΩ at 100 A and 10 V
High continuous drain current of 200 A at 25°C
Wide operating temperature range of -55°C to 175°C
Low gate charge of 81 nC at 10 V
High power dissipation of 300 W at 25°C
Product Advantages
Excellent thermal management and power density
Fast switching speed and low switching losses
Robust and reliable performance
Key Technical Parameters
Drain-to-Source Voltage (VDS): 60 V
Gate-to-Source Voltage (VGS): ±20 V
On-Resistance (RDS(on)): 2 mΩ @ 100 A, 10 V
Continuous Drain Current (ID): 200 A @ 25°C
Input Capacitance (Ciss): 6620 pF @ 30 V
Power Dissipation (PD): 300 W @ 25°C
Quality and Safety Features
RoHS3 compliant
Meets high-reliability standards
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Electric vehicles
Industrial and consumer electronics
Product Lifecycle
Currently in active production
No plans for discontinuation or replacement at this time
Key Reasons to Choose This Product
Exceptional power handling and efficiency
Excellent thermal management for high-power applications
Reliable and robust performance across a wide temperature range
Optimized for fast switching and low switching losses
Compact and easy to integrate into various designs
CSD18535KCSTexas InstrumentsMOSFET N-CH 60V 200A TO220-3