Manufacturer Part Number
CSD18536KTT
Manufacturer
Texas Instruments
Introduction
High-performance N-channel MOSFET transistor
Product Features and Performance
Optimized for high-performance power conversion
Extremely low on-resistance (RDS(on))
Very low input capacitance (Ciss)
High continuous drain current (ID) rating
Wide operating temperature range (-55°C to 175°C)
Suitable for high-frequency, high-efficiency power conversion applications
Product Advantages
Excellent power density and efficiency
Robust design for high reliability
Optimized for high-performance power conversion
Key Technical Parameters
Drain-to-Source Voltage (VDS): 60V
Gate-to-Source Voltage (VGS): ±20V
On-Resistance (RDS(on)): 1.6mΩ @ 100A, 10V
Continuous Drain Current (ID): 200A @ 25°C
Input Capacitance (Ciss): 11,430pF @ 30V
Power Dissipation (Pd): 375W @ 25°C
Quality and Safety Features
RoHS3 compliant
Robust package design (DDPAK/TO-263-3)
Compatibility
Suitable for a wide range of high-performance power conversion applications
Application Areas
Power supplies
Motor drives
Inverters
Converters
Industrial and automotive power systems
Product Lifecycle
Current product, not nearing discontinuation
Replacement and upgrade options available
Key Reasons to Choose This Product
Exceptional power density and efficiency
Extremely low on-resistance for high performance
Wide operating temperature range for robust operation
Optimized for high-frequency, high-efficiency power conversion
Reliable and robust package design for industrial applications