Manufacturer Part Number
CSD18542KCS
Manufacturer
Texas Instruments
Introduction
High power density N-channel MOSFET with low on-resistance and high current handling capability
Product Features and Performance
Extremely low on-resistance (RDS(on) of 44 mΩ at 100 A, 10 V)
High current rating up to 200 A continuous at 25°C
Wide operating temperature range of -55°C to 175°C
Low input capacitance (Ciss) of 5,070 pF at 30 V
Fast switching characteristics
Low gate charge (Qg) of 57 nC at 10 V
Product Advantages
Enables high efficiency power conversion in high power applications
Excellent thermal performance
Robust and reliable design
Key Technical Parameters
Drain-Source Voltage (VDS): 60 V
Gate-Source Voltage (VGS): ±20 V
Continuous Drain Current (ID): 200 A at 25°C
On-Resistance (RDS(on)): 44 mΩ at 100 A, 10 V
Input Capacitance (Ciss): 5,070 pF at 30 V
Power Dissipation (PD): 200 W at 25°C
Quality and Safety Features
RoHS3 compliant
Robust and reliable design for industrial and automotive applications
Compatibility
Through-hole TO-220-3 package
Application Areas
High-power switching applications
Industrial motor drives
Power supplies
Electric vehicles
Renewable energy systems
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade options available from Texas Instruments
Key Reasons to Choose This Product
Exceptional power density and efficiency due to ultra-low on-resistance
Ability to handle high currents up to 200 A
Wide operating temperature range for demanding applications
Fast switching and low gate charge for high-frequency operation
Robust and reliable design suitable for industrial and automotive use
RoHS3 compliance for environmentally-friendly applications
