Manufacturer Part Number
CSD18542KTT
Manufacturer
Texas Instruments
Introduction
Discrete Semiconductor Product
Transistor FET, MOSFET Single
Product Features and Performance
ROHS3 Compliant
TO-263-4, DPak (3 Leads + Tab), TO-263AA package
NexFET series
N-Channel MOSFET
Operating Temperature: -55°C to 175°C
Drain to Source Voltage (Vdss): 60V
Maximum Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 4mΩ @ 100A, 10V
Continuous Drain Current (Id): 200A @ 25°C
Input Capacitance (Ciss): 5070pF @ 30V
Power Dissipation (Tc): 250W
Gate Charge (Qg): 57nC @ 10V
Product Advantages
High Efficiency
Low On-Resistance
High Current Capability
Wide Operating Temperature Range
Key Technical Parameters
Transistor Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Threshold Voltage (Vgs(th)): 2.2V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Quality and Safety Features
ROHS3 Compliant
Compatibility
Surface Mount Mounting
Application Areas
Suitable for a wide range of power electronics applications, such as motor drives, power supplies, and switching circuits.
Product Lifecycle
Current product, no indication of discontinuation.
Replacements and upgrades may be available from Texas Instruments.
Several Key Reasons to Choose This Product
High efficiency and low on-resistance for improved power efficiency
High current capability for demanding applications
Wide operating temperature range for versatile use
Robust construction and safety compliance (ROHS3)
Compatibility with surface mount assembly
CSD19501KCSTexas InstrumentsMOSFET N-CH 80V 100A TO220-3