Manufacturer Part Number
CSD19502Q5BT
Manufacturer
Texas Instruments
Introduction
High-performance N-channel NexFET power MOSFET
Product Features and Performance
80V Drain-Source Voltage
1mΩ Maximum On-Resistance
100A Continuous Drain Current
Wide Operating Temperature Range: -55°C to 150°C
Product Advantages
Excellent figure of merit (FOM) for high-efficiency power conversion
Optimized for high-frequency, high-power density applications
Low gate charge and gate-source voltage for ease of driving
Key Technical Parameters
Drain-Source Voltage (Vdss): 80V
Maximum Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 4.1mΩ @ 19A, 10V
Continuous Drain Current (Id): 100A @ 25°C
Input Capacitance (Ciss): 4870pF @ 40V
Power Dissipation: 3.1W (Ta), 195W (Tc)
Quality and Safety Features
RoHS3 Compliant
Suitable for high-reliability, high-power applications
Compatibility
Compatible with a wide range of power electronic systems and circuits
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Welding equipment
Industrial and consumer electronics
Product Lifecycle
Currently available
No plans for discontinuation
Key Reasons to Choose This Product
Excellent power efficiency and high power density
Robust and reliable performance across a wide temperature range
Ease of driving and integration into power electronic designs
Optimized for high-frequency, high-power applications
