Manufacturer Part Number
CSD19531Q5AT
Manufacturer
Texas Instruments
Introduction
High-performance N-channel MOSFET with low on-resistance and fast switching
Product Features and Performance
Low on-resistance of 6.4 mΩ at 16 A, 10 V
High current capability of 100 A continuous at 25°C
Fast switching with low gate charge of 48 nC at 10 V
Wide operating temperature range of -55°C to 150°C
High breakdown voltage of 100 V
Product Advantages
Efficient power conversion with low power losses
Reliable operation in high-current applications
Suitable for high-frequency switching designs
Robust design for demanding environments
Key Technical Parameters
Drain-Source Voltage (Vdss): 100 V
Gate-Source Voltage (Vgs): ±20 V
Continuous Drain Current (Id): 100 A at 25°C
On-Resistance (Rds(on)): 6.4 mΩ at 16 A, 10 V
Input Capacitance (Ciss): 3870 pF at 50 V
Power Dissipation: 3.3 W at Ta, 125 W at Tc
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Suitable for a wide range of power electronics applications, including power supplies, motor drives, and inverters
Application Areas
Ideal for high-power, high-efficiency power conversion applications
Suitable for industrial, automotive, and consumer electronics applications
Product Lifecycle
This product is currently in production and not nearing discontinuation
Replacement or upgraded models may become available in the future as technology advances
Key Reasons to Choose This Product
Excellent performance with low on-resistance and fast switching
High current capability and wide operating temperature range
Reliable and efficient operation in demanding applications
Robust design for harsh environments
Compatibility with a wide range of power electronics applications
