Manufacturer Part Number
CSD19532KTT
Manufacturer
Texas Instruments
Introduction
High-performance N-channel MOSFET in a surface-mount package for high-power switching applications
Product Features and Performance
Ultralow on-resistance for high efficiency
High current capability up to 200A
Wide operating voltage range up to 100V
Suitable for high-frequency switching applications
Low gate charge for fast switching
Product Advantages
Improved energy efficiency
High power density
Reliable operation in harsh environments
Key Technical Parameters
Drain to Source Voltage (Vdss): 100V
On-resistance (Rds(on)): 5.6mΩ
Continuous Drain Current (Id): 200A
Operating Temperature: -55°C to 175°C
Input Capacitance (Ciss): 5060pF
Power Dissipation: 250W
Quality and Safety Features
RoHS3 compliant
DDPAK/TO-263-3 package for secure mounting and thermal management
Compatibility
Suitable for a wide range of high-power switching applications, including:
Power supplies
Motor drives
Inverters
Converters
Application Areas
Industrial
Automotive
Renewable energy
Telecommunications
Product Lifecycle
This product is currently in production and widely available. There are no plans for discontinuation or major design changes in the near future.
Key Reasons to Choose This Product
Exceptional efficiency and power density: The ultralow on-resistance and high current capability enable high-efficiency power conversion.
Reliable operation in harsh environments: The wide operating temperature range and robust package design ensure reliable performance.
Suitability for high-frequency switching: The low gate charge and fast switching characteristics make this MOSFET ideal for high-frequency switching applications.
Compatibility with a wide range of power electronics systems: The product can be easily integrated into various power conversion and control circuits.
Proven technology and manufacturer reputation: Texas Instruments is a trusted supplier of high-quality semiconductor products with a long history of innovation.
