Manufacturer Part Number
CSD19532Q5B
Manufacturer
Texas Instruments
Introduction
The CSD19532Q5B is a high-performance N-channel MOSFET transistor from Texas Instruments' NexFET series. It is designed for a wide range of power management and control applications.
Product Features and Performance
100V drain-to-source voltage
±20V gate-to-source voltage
9mOhm maximum on-resistance at 17A, 10V
100A continuous drain current at 25°C
4810pF maximum input capacitance at 50V
1W maximum power dissipation at Ta, 195W at Tc
-55°C to 150°C operating temperature range
Product Advantages
High efficiency and low power loss
Compact 8-VSON-CLIP (5x6) package
Suitable for high-current and high-voltage applications
Excellent thermal and electrical performance
Key Technical Parameters
MOSFET technology
N-channel FET type
2V maximum gate threshold voltage at 250A
6V to 10V drive voltage range
62nC maximum gate charge at 10V
Quality and Safety Features
RoHS3 compliant
Designed for reliable and safe operation
Compatibility
Surface mount package
Tape and reel packaging
Application Areas
Power supplies
Motor drives
Industrial controls
Automotive electronics
Product Lifecycle
Current product offering
Replacements and upgrades may be available in the future
Key Reasons to Choose
High power density and efficiency
Excellent thermal management
Robust and reliable performance
Suitable for a wide range of power applications
