Manufacturer Part Number
CSD19506KCS
Manufacturer
Texas Instruments
Introduction
High-performance N-channel MOSFET transistor designed for power conversion applications.
Product Features and Performance
80V drain-to-source voltage rating
Ultra-low 2.3mΩ on-resistance
100A continuous drain current
Wide operating temperature range of -55°C to 175°C
Low input capacitance of 12,200pF
Maximum power dissipation of 375W
Product Advantages
Excellent power efficiency due to low on-resistance
Able to handle high currents and power dissipation
Wide operating temperature range provides flexibility
Compact TO-220-3 package for easy installation
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 80V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 2.3mΩ
Continuous Drain Current (Id): 100A
Input Capacitance (Ciss): 12,200pF
Power Dissipation (Tc): 375W
Quality and Safety Features
RoHS3 compliant for environmental responsibility
Tested and qualified to industrial standards
Compatibility
Compatible with various power conversion and control applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Regulators
Other power electronics applications
Product Lifecycle
Currently in production
No plans for discontinuation
Replacement or upgrade options available if needed
Key Reasons to Choose This Product
Ultra-low on-resistance for high efficiency
Ability to handle high currents and power dissipation
Wide operating temperature range for flexibility
Compact package for easy integration
Reliable and RoHS3 compliant design
