Manufacturer Part Number
CSD18563Q5A
Manufacturer
Texas Instruments
Introduction
High-performance N-channel power MOSFET with low on-resistance
Product Features and Performance
Ultra-low on-resistance of 6.8 mΩ @ 18 A, 10 V
High current capability of 100 A continuous drain current
Low gate charge of 20 nC @ 10 V
Wide operating temperature range of -55°C to 150°C
High-speed switching performance
Product Advantages
Excellent power efficiency due to low on-resistance
Enables high-power density designs
Improved thermal management with low power dissipation
Suitable for high-current, high-temperature applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 60 V
Gate-to-Source Voltage (Vgs): ±20 V
On-Resistance (Rds(on)): 6.8 mΩ @ 18 A, 10 V
Continuous Drain Current (Id): 100 A @ 25°C
Input Capacitance (Ciss): 1500 pF @ 30 V
Power Dissipation (Pd): 3.2 W @ 25°C (Ta), 116 W @ 25°C (Tc)
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Compatibility
Suitable for various power conversion and control applications
Application Areas
Automotive electronics
Industrial motor drives
Power supplies
Lighting systems
Consumer electronics
Product Lifecycle
This product is an active and in-production device from Texas Instruments.
No known plans for discontinuation or end-of-life at this time.
Key Reasons to Choose This Product
Excellent power efficiency and thermal performance due to ultra-low on-resistance
High current capability and switching speed for high-power density designs
Wide operating temperature range for demanding applications
Automotive-grade quality and safety features
Suitable for a wide range of power conversion and control applications
