Manufacturer Part Number
CSD19505KTT
Manufacturer
Texas Instruments
Introduction
High-performance, low-resistance N-channel MOSFET for power conversion and motor drive applications
Product Features and Performance
Optimized for high-frequency, high-current applications
Ultra-low on-resistance (3.1 mΩ) for high efficiency
High-current capability (200 A continuous, 300 W power dissipation)
Wide operating temperature range (-55°C to 175°C)
Product Advantages
Excellent thermal performance
Reliable and robust design
Suitable for high-frequency, high-current applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 80 V
Gate-Source Voltage (Vgs): ±20 V
On-Resistance (Rds(on)): 3.1 mΩ @ 100 A, 10 V
Input Capacitance (Ciss): 7920 pF @ 40 V
Power Dissipation (Tc): 300 W
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Designed for power conversion and motor drive applications
Application Areas
Power supplies
Motor drives
Electric vehicles
Industrial automation
Product Lifecycle
Currently in production
Replacements and upgrades available
Key Reasons to Choose This Product
Excellent efficiency and thermal performance
High-current capability and wide operating temperature range
Reliable and robust design for critical applications
Suitable for high-frequency, high-current power conversion and motor drive systems
