Manufacturer Part Number
CSD19531Q5A
Manufacturer
Texas Instruments
Introduction
Discrete Semiconductor Products
Transistors FETs, MOSFETs Single
Product Features and Performance
RoHS3 Compliant
Surface Mount Mounting Type
NexFET Series
MOSFET (Metal Oxide) Technology
N-Channel FET Type
High Drain-Source Voltage (100V)
Low On-Resistance (6.4mOhm)
High Continuous Drain Current (100A)
Wide Operating Temperature Range (-55°C to 150°C)
Low Gate Charge (48nC)
Product Advantages
Efficient power conversion
High power density
Reliable performance
Key Technical Parameters
Drain to Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs): ±20V
Drain Current (Id): 100A
On-Resistance (Rds(on)): 6.4mOhm
Input Capacitance (Ciss): 3870pF
Power Dissipation: 3.3W (Ta), 125W (Tc)
Quality and Safety Features
RoHS3 Compliant
Compatibility
Surface Mount
8-PowerTDFN Package
Application Areas
Power conversion
Motor control
Inverters
Converters
Product Lifecycle
Current product
No information on discontinuation or replacements
Key Reasons to Choose
High power density
Efficient power conversion
Reliable performance
Wide operating temperature range
Low on-resistance
High drain current capability
