Manufacturer Part Number
CSD19533Q5AT
Manufacturer
Texas Instruments
Introduction
High-performance, low on-resistance N-channel MOSFET transistor
Designed for high-current, high-voltage power conversion applications
Product Features and Performance
100V drain-source voltage
Extremely low on-resistance of 9.4mOhm @ 13A, 10V
Continuous drain current of 100A at 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 2670pF @ 50V
Maximum power dissipation of 3.2W (Ta) and 96W (Tc)
Product Advantages
Excellent efficiency and thermal performance
Compact 8-VSONP (5x6) package
Optimized for high-power density designs
Suitable for high-current, high-voltage applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 9.4mOhm @ 13A, 10V
Drain Current (Id): 100A @ 25°C
Input Capacitance (Ciss): 2670pF @ 50V
Gate Charge (Qg): 35nC @ 10V
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Compatible with a wide range of high-power, high-voltage circuits and systems
Application Areas
Switching power supplies
Motor drives
Electric vehicles
Industrial equipment
Telecom and server power
Product Lifecycle
Currently in production
No known discontinuation plans
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent efficiency and thermal performance
Compact and optimized for high-power density designs
Suitable for a wide range of high-current, high-voltage applications
Reliable and RoHS3 compliant
Backed by the reputation and support of Texas Instruments
