Manufacturer Part Number
CSD19534Q5A
Manufacturer
Texas Instruments
Introduction
High-performance N-channel MOSFET for power conversion and motor control applications
Product Features and Performance
100V drain-to-source voltage
Low on-resistance of 15.1mΩ at 10A, 10V
High current capability of 44A continuous drain current
Compact 8-VSONP (5x6) package
Wide operating temperature range of -55°C to 150°C
Fast switching with low gate charge of 22nC at 10V
Product Advantages
Excellent power density and efficiency
Robust performance across broad temperature range
Compact, space-saving package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 15.1mΩ @ 10A, 10V
Continuous Drain Current (Id): 44A
Input Capacitance (Ciss): 1680pF @ 50V
Power Dissipation: 3.2W (Ta), 63W (Tc)
Quality and Safety Features
RoHS3 compliant
Suitable for safety-critical applications
Compatibility
Designed for power conversion and motor control applications
Application Areas
Servers and telecom infrastructure
Industrial automation and control
Electric vehicles and hybrid electric vehicles
Home appliances and consumer electronics
Product Lifecycle
Currently available
No plans for discontinuation
Key Reasons to Choose This Product
Excellent power density and efficiency for high-performance power conversion
Wide temperature range and robust performance for demanding applications
Compact, space-saving package for design flexibility
High current capability and low on-resistance for improved system performance
Fast switching and low gate charge for efficient power conversion
