Manufacturer Part Number
CSD19536KTTT
Manufacturer
Texas Instruments
Introduction
High-performance N-channel NexFET power MOSFET
Product Features and Performance
High current capability up to 200A
Low on-resistance of 2.4 mΩ
High voltage rating of 100 V
Wide operating temperature range from -55°C to 175°C
Fast switching and low gate charge
Product Advantages
Excellent thermal performance
High power density
Reliable and robust design
Suitable for high-power, high-efficiency applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 100 V
Gate-Source Voltage (Vgs): ±20 V
Continuous Drain Current (ID): 200 A
On-Resistance (Rds(on)): 2.4 mΩ
Input Capacitance (Ciss): 12,000 pF
Power Dissipation (Pd): 375 W
Quality and Safety Features
RoHS3 compliant
Designed for high reliability and safety
Compatibility
Compatible with a wide range of high-power, high-efficiency applications
Application Areas
Switching power supplies
Motor drives
Electric vehicles
Industrial and renewable energy systems
Product Lifecycle
This product is currently in production and is not nearing discontinuation.
Replacement or upgrade options may be available from Texas Instruments.
Key Reasons to Choose This Product
Exceptional performance and power density
Highly reliable and robust design
Suitable for a wide range of high-power, high-efficiency applications
Backed by the expertise and support of Texas Instruments
CSD20060Cree LED