CSD19538Q3A - Texas Instruments

Manufacturer Part Number

CSD19538Q3A

Manufacturer

Texas Instruments

Introduction

NexFET N-channel MOSFET transistor for power management applications

Product Features and Performance

100V Drain to Source Voltage (Vdss)

15A Continuous Drain Current (Id) at 25°C

59mΩ Maximum On-Resistance (Rds(on)) at 5A, 10V

454pF Maximum Input Capacitance (Ciss) at 50V

8W Maximum Power Dissipation at 25°C

23W Maximum Power Dissipation at 100°C

Product Advantages

High efficiency power conversion

Low on-resistance for low power loss

Compact 8-VSONP (3x3.3) package

Wide operating temperature range of -55°C to 150°C

Key Technical Parameters

Drain to Source Voltage (Vdss): 100V

Gate to Source Voltage (Vgs): ±20V

Threshold Voltage (Vgs(th)): 3.8V at 250µA

Drive Voltage (Max Rds(on), Min Rds(on)): 6V, 10V

Gate Charge (Qg): 4.3nC at 10V

Quality and Safety Features

RoHS3 Compliant

Suitable for high-reliability applications

Compatibility

Compatible with various power management circuits and systems

Application Areas

Switching power supplies

DC-DC converters

Motor drives

Inverters

Class-D audio amplifiers

Product Lifecycle

Currently in production

No known plans for discontinuation

Replacement or upgrade options available as needed

Key Reasons to Choose This Product

High efficiency and low power loss for improved system performance

Compact and thermally efficient package for space-constrained designs

Wide operating temperature range for reliable operation in diverse environments

Robust design and quality features for high-reliability applications

Compatibility with various power management circuits and systems