CSD19538Q2 - Texas Instruments

Manufacturer Part Number

CSD19538Q2

Manufacturer

Texas Instruments

Introduction

High-performance power MOSFET transistor designed for power management applications

Product Features and Performance

100V drain-to-source voltage

Low on-resistance of 59mΩ @ 5A, 10V

Continuous drain current of 14.4A at 25°C

Wide operating temperature range of -55°C to 150°C

Fast switching speed and low gate charge of 5.6nC @ 10V

Product Advantages

Excellent power efficiency due to low on-resistance

Robust and reliable operation across wide temperature range

Optimized for high-frequency power conversion applications

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 100V

Gate-to-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 59mΩ @ 5A, 10V

Continuous Drain Current (Id): 14.4A @ 25°C

Input Capacitance (Ciss): 454pF @ 50V

Power Dissipation (Pd): 2.5W (Ta), 20.2W (Tc)

Quality and Safety Features

RoHS3 compliant

Exposed pad package for improved thermal performance

Compatibility

Compatible with a wide range of power management applications

Application Areas

Switched-mode power supplies

Motor drives

Inverters

DC-DC converters

Product Lifecycle

Currently in production

Replacement or upgrade options available from Texas Instruments

Key Reasons to Choose This Product

Excellent power efficiency and thermal management

Robust and reliable performance across wide temperature range

Optimized for high-frequency power conversion applications

Compatibility with a wide range of power management systems

Availability of replacement and upgrade options from the manufacturer