Manufacturer Part Number
CSD19536KTT
Manufacturer
Texas Instruments
Introduction
High-performance N-channel MOSFET transistor
Designed for high-power, high-efficiency applications
Product Features and Performance
Wide operating temperature range: -55°C to 175°C
High drain-to-source voltage: 100V
Low on-resistance: 2.4mΩ @ 100A, 10V
High continuous drain current: 200A @ 25°C
Low input capacitance: 12,000pF @ 50V
High power dissipation: 375W @ Tc
Product Advantages
Excellent thermal performance
Low switching and conduction losses
High power density
Reliable operation in high-stress environments
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 2.4mΩ @ 100A, 10V
Continuous Drain Current (Id): 200A @ 25°C
Input Capacitance (Ciss): 12,000pF @ 50V
Power Dissipation (Pd): 375W @ Tc
Quality and Safety Features
RoHS3 compliant
DDPAK/TO-263-3 package for high thermal efficiency
Robust and reliable design for industrial applications
Compatibility
Suitable for a wide range of high-power, high-efficiency applications
Commonly used in power supplies, motor drives, and other industrial equipment
Application Areas
Power supplies
Motor drives
Industrial automation
Renewable energy systems
Electric vehicles
Product Lifecycle
Current production, no plans for discontinuation
Replacement or upgrade models available if needed
Key Reasons to Choose This Product
Excellent thermal performance and power handling capabilities
Low on-resistance for high efficiency
Wide operating temperature range for reliable operation
Robust and reliable design for industrial applications
Compatibility with a wide range of high-power systems
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