Manufacturer Part Number
CSD19531KCS
Manufacturer
Texas Instruments
Introduction
High-performance N-channel MOSFET in a TO-220-3 package
Product Features and Performance
100V Drain-Source Voltage
100A Continuous Drain Current
7mΩ Maximum On-Resistance
Fast switching with low gate charge
Wide operating temperature range (-55°C to 175°C)
Excellent thermal performance
Product Advantages
High power density
Efficient power conversion
Reliable operation in harsh environments
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 7.7mΩ
Continuous Drain Current (Id): 100A
Input Capacitance (Ciss): 3870pF
Power Dissipation (Tc): 214W
Gate Charge (Qg): 38nC
Quality and Safety Features
RoHS3 compliant
TO-220-3 package for reliable through-hole mounting
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Power supplies
Motor drives
Industrial automation
Inverters
Electric vehicles
Product Lifecycle
This product is currently in production and available for purchase
Replacements or upgrades may be available in the future
Several Key Reasons to Choose This Product
High power density and efficient power conversion
Reliable operation in harsh environments
Excellent thermal performance
Fast switching with low gate charge
Compatibility with a wide range of applications
