Manufacturer Part Number
CSD18563Q5AT
Manufacturer
Texas Instruments
Introduction
High-performance N-channel NexFET MOSFET with low on-resistance and high current capability
Product Features and Performance
Very low on-resistance of 6.8 mΩ @ 18 A, 10 V
High current capability of 100 A continuous drain current
Wide voltage range of 60 V drain-to-source voltage
Wide operating temperature range of -55°C to 150°C
Fast switching and low gate charge of 20 nC at 10 V
Small 8-VSONP (5x6) package
Product Advantages
Excellent power efficiency and thermal performance
Enables high power density and compact design
Suitable for high-current and high-frequency applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 60 V
Gate-to-Source Voltage (Vgs): ±20 V
On-Resistance (Rds(on)): 6.8 mΩ @ 18 A, 10 V
Continuous Drain Current (Id): 100 A
Input Capacitance (Ciss): 1500 pF @ 30 V
Power Dissipation: 3.2 W (Ta), 116 W (Tc)
Quality and Safety Features
RoHS3 compliant
Meets industrial and automotive grade requirements
Compatibility
Suitable for a wide range of high-power, high-efficiency applications such as:
Power supplies
Motor drivers
Inverters
Converters
Application Areas
Industrial
Automotive
Telecommunications
Consumer electronics
Product Lifecycle
This product is currently in active production and is not nearing discontinuation. Replacement or upgrade options may be available from Texas Instruments.
Several Key Reasons to Choose This Product
Exceptional power efficiency and thermal performance due to the low on-resistance and high current capability.
Compact and high-density design enabled by the small 8-VSONP (5x6) package.
Versatile compatibility with a wide range of high-power, high-efficiency applications.
Reliable and high-quality design to meet industrial and automotive grade requirements.
Ongoing product support and availability from the trusted manufacturer, Texas Instruments.
