Manufacturer Part Number
NJVMJD42CT4G
Manufacturer
onsemi
Introduction
High-performance PNP bipolar junction transistor (BJT) with integrated shunt resistor for automotive applications.
Product Features and Performance
Optimized for automotive applications
High collector-emitter voltage up to 100V
High collector current up to 6A
Low collector-emitter saturation voltage
Wide operating temperature range from -65°C to 150°C
AEC-Q101 qualified
Integrated shunt resistor
Product Advantages
Robust design for automotive environments
Excellent electrical performance
Space-saving DPAK package
Simplified circuit design with integrated shunt resistor
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 100V
Collector Current: 6A
Collector Cutoff Current: 50A
Collector-Emitter Saturation Voltage: 1.5V @ 600mA, 6A
DC Current Gain: 30 @ 300mA, 4V
Transition Frequency: 3MHz
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Reliable DPAK package
Compatibility
Designed for use in automotive electronic systems
Application Areas
Automotive electronics
Power management circuits
Motor control applications
Switching and amplifier circuits
Product Lifecycle
Current production part
No known plans for discontinuation
Replacements or upgrades may be available in the future
Several Key Reasons to Choose This Product
Robust and reliable design for automotive environments
Excellent electrical performance with high voltage, current, and frequency capabilities
Simplified circuit design with integrated shunt resistor
Wide operating temperature range and AEC-Q101 qualification for automotive applications
Space-saving DPAK package