Manufacturer Part Number
NJVMJD32CT4G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT), Single
RoHS3 Compliant
Product Features and Performance
TO-252-3, DPak (2 Leads + Tab), SC-63 Package
Automotive, AEC-Q101 Qualified
Operating Temperature: -65°C to 150°C (TJ)
Power Rating: 1.56 W
Collector-Emitter Breakdown Voltage: 100 V
Collector Current (Max): 3 A
Collector Cutoff Current (Max): 50 A
Collector-Emitter Saturation Voltage: 1.2 V @ 375 mA, 3 A
DC Current Gain (hFE): 25 min @ 1 A, 4 V
Transition Frequency: 3 MHz
Product Advantages
Automotive-grade reliability and performance
Compact surface-mount package
High power handling capacity
Wide operating temperature range
Key Technical Parameters
Transistor Type: PNP
Packaging: Tape & Reel
Quality and Safety Features
RoHS3 Compliant
AEC-Q101 Qualified
Compatibility
Suitable for various automotive and industrial applications
Application Areas
Automotive electronics
Industrial control systems
Power management circuits
Product Lifecycle
Current production model
Replacements and upgrades available
Key Reasons to Choose This Product
Automotive-grade reliability
Excellent power handling and thermal capabilities
Compact surface-mount package for space-constrained designs
Wide operating temperature range for harsh environments
RoHS3 compliance for environmentally-conscious applications
