Manufacturer Part Number
NJVMJD2955T4G
Manufacturer
onsemi
Introduction
High power PNP bipolar junction transistor (BJT) for power amplifier and switching applications.
Product Features and Performance
High collector-emitter breakdown voltage (60V)
High collector current capability (10A)
High collector current gain (20 min @ 4A, 4V)
Fast transition frequency (2MHz)
Designed for high power and high current applications
Suitable for power amplifiers, switching regulators, and other power control circuits
Product Advantages
Robust high power handling capability
High frequency performance
Reliable and efficient operation
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEmax): 60V
Collector Current (ICmax): 10A
Collector Current Gain (hFEmin): 20 @ 4A, 4V
Transition Frequency (fT): 2MHz
Power Dissipation (Ptot): 1.75W
Quality and Safety Features
RoHS3 compliant
Suitable for high temperature operation (-55°C to 150°C)
Compatibility
TO-252-3, DPak (2 Leads + Tab), SC-63 package
Surface mount installation
Application Areas
Power amplifiers
Switching regulators
Motor controls
Industrial power control circuits
Product Lifecycle
This product is currently in active production and availability.
Replacement or upgraded models may become available in the future as technology evolves.
Key Reasons to Choose This Product
High power handling capability for demanding applications
Robust and reliable performance across a wide temperature range
Fast switching and high frequency operation
RoHS compliance for environmentally-friendly usage
Convenient surface mount package for easy integration
NJVMJD32CT4G-VF01ONsemi