NJVMJD243T4G - onsemi

Manufacturer Part Number

NJVMJD243T4G

Manufacturer

onsemi

Introduction

High-voltage, high-current bipolar junction transistor (BJT)

Designed for use in power switching and amplification applications

Product Features and Performance

Wide operating temperature range of -65°C to 150°C

4W maximum power dissipation

100V maximum collector-emitter breakdown voltage

4A maximum collector current

Low saturation voltage of 600mV @ 1A collector current

40MHz transition frequency

Surface mount DPAK package

Product Advantages

Reliable high-power performance

Compact surface mount package

Wide operating temperature range

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 100V

Current Collector (Ic) (Max): 4A

Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A

DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V

Frequency Transition: 40MHz

Quality and Safety Features

RoHS3 compliant

DPAK package for enhanced thermal performance and reliability

Compatibility

Suitable for use in power switching and amplification applications

Application Areas

Power supplies

Motor drives

Inverters

Switching regulators

Product Lifecycle

This product is currently in production and widely available.

Replacements or upgrades may be available in the future as technology evolves.

Key Reasons to Choose This Product

Reliable high-power performance in a compact surface mount package

Wide operating temperature range suitable for harsh environments

Low saturation voltage for improved efficiency

High transition frequency for high-speed switching applications

RoHS3 compliance for environmental responsibility