NJVMJD122T4G - onsemi

Manufacturer Part Number

NJVMJD122T4G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

NPN Darlington Transistor

Product Features and Performance

Operating Temperature: -65°C ~ 150°C

Power Rating: 1.75 W

Voltage Collector Emitter Breakdown (Max): 100 V

Current Collector (Ic) (Max): 8 A

Current Collector Cutoff (Max): 10 A

Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A

DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V

Frequency Transition: 4 MHz

Product Advantages

Automotive and AEC-Q101 qualified

Surface Mount packaging (DPAK)

Tape and Reel packaging

Key Technical Parameters

Transistor Type: NPN Darlington

Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Quality and Safety Features

RoHS3 Compliant

Compatibility

Suitable for various automotive and industrial applications

Application Areas

Automotive

Industrial

Product Lifecycle

This product is currently available and not nearing discontinuation.

Key Reasons to Choose This Product

Automotive and AEC-Q101 qualified, ensuring reliability in harsh environments

High current handling capability up to 8 A

High DC current gain of 1000 for efficient amplification

4 MHz transition frequency enabling high-speed switching

Surface mount DPAK package for compact design

Tape and Reel packaging for efficient manufacturing and assembly