Manufacturer Part Number
NJVMJD127T4G
Manufacturer
onsemi
Introduction
High-voltage, high-current PNP bipolar junction transistor (BJT) in a DPAK package.
Product Features and Performance
High voltage rating up to 100V
High current capability up to 8A
High current gain up to 1000
Low collector-emitter saturation voltage
Wide operating temperature range from -65°C to 150°C
Product Advantages
Suitable for high-power switching and amplification applications
Robust design for reliable performance
Space-saving DPAK surface-mount package
Key Technical Parameters
Collector-Emitter Breakdown Voltage (Max): 100V
Collector Current (Max): 8A
Collector Cutoff Current (Max): 10A
DC Current Gain (hFE) (Min): 1000 @ 4A, 4V
Collector-Emitter Saturation Voltage (Max): 4V @ 80mA, 8A
Power Dissipation (Max): 20W
Operating Temperature Range: -65°C to 150°C
Quality and Safety Features
RoHS3 compliant
Suitable for reflow soldering in a tape and reel package
Compatibility
Suitable for use in a variety of high-power electronic circuits and applications
Application Areas
Switching power supplies
Motor drives
Audio amplifiers
Industrial control systems
Product Lifecycle
This product is an active and widely available component from onsemi.
Replacements and upgrades may be available as technology evolves.
Key Reasons to Choose This Product
High voltage and current handling capability for demanding applications
Excellent electrical performance with high current gain and low saturation voltage
Robust design and wide temperature range for reliable operation
Space-saving surface-mount DPAK package for compact designs
RoHS3 compliance for environmentally-conscious applications