NJVMJD253T4G - onsemi

Manufacturer Part Number

NJVMJD253T4G

Manufacturer

onsemi

Introduction

High-voltage, high-current NPN bipolar junction transistor (BJT)

Designed for use in automotive and industrial applications

Product Features and Performance

Collector-Emitter Voltage (Breakdown): 100V

Collector Current (Max): 4A

Power Dissipation (Max): 1.4W

Transition Frequency: 40MHz

DC Current Gain: 40 (min) @ 200mA, 1V

Low Collector-Emitter Saturation Voltage: 600mV @ 100mA, 1A

Wide Operating Temperature Range: -65°C to 150°C

Product Advantages

Robust design for harsh environments

High reliability and long lifespan

Excellent thermal management

Suitable for high-power, high-speed switching applications

Key Technical Parameters

Collector-Emitter Voltage: 100V

Collector Current: 4A

Power Dissipation: 1.4W

Transition Frequency: 40MHz

DC Current Gain: 40 (min)

Collector-Emitter Saturation Voltage: 600mV

Quality and Safety Features

RoHS3 compliant

AEC-Q101 qualified for automotive applications

Reliable performance in extreme temperatures (-65°C to 150°C)

Compatibility

Suitable for surface mount (DPAK) applications

Tape and reel packaging for automated assembly

Application Areas

Automotive electronics (e.g., motor control, power management)

Industrial power supplies and converters

Switching power amplifiers

General-purpose high-power, high-speed switching

Product Lifecycle

Current production model

Replacements and upgrades available as needed

Key Reasons to Choose This Product

Robust design for harsh environments

High reliability and long lifespan

Excellent thermal management and power handling

Suitable for a wide range of high-power, high-speed switching applications

Automotive and industrial grade quality and safety features