Manufacturer Part Number
NJVMJD31CT4G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) Single
Product Features and Performance
RoHS3 compliant
DPAK packaging
Automotive grade, AEC-Q101 qualified
Operating temperature range: -65°C to 150°C
Power rating: 1.56 W
Collector-Emitter Breakdown Voltage (max): 100 V
Collector Current (max): 3 A
Collector Cutoff Current (max): 50 A
Collector-Emitter Saturation Voltage (max) @ Ib, Ic: 1.2 V @ 375 mA, 3 A
DC Current Gain (hFE) (min) @ Ic, Vce: 25 @ 1 A, 4 V
Transition Frequency: 3 MHz
Product Advantages
Automotive-grade reliability and performance
Compact DPAK surface mount package
Wide operating temperature range
High power handling capability
Key Technical Parameters
Transistor Type: NPN
Packaging: DPAK, Tape & Reel
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Compatibility
Surface mount compatible
Suitable for automotive and industrial applications
Application Areas
Automotive electronics
Industrial control and power systems
Switching and amplifier circuits
Product Lifecycle
Current product, no plans for discontinuation
Replacement or upgrade options available
Key Reasons to Choose this Product
Automotive-grade reliability and performance
Wide operating temperature range
High power handling capability
Compact DPAK surface mount package
RoHS3 compliance and AEC-Q101 qualification