Manufacturer Part Number
NJVMJD3055T4G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Single Bipolar Junction Transistor (BJT)
Product Features and Performance
RoHS3 Compliant
DPAK Packaging
Operating Temperature Range: -55°C to 150°C
Max Power: 1.75W
Max Collector-Emitter Breakdown Voltage: 60V
Max Collector Current: 10A
Max Collector Cutoff Current: 50A
Max Collector-Emitter Saturation Voltage: 8V @ 3.3A, 10A
Minimum DC Current Gain: 20 @ 4A, 4V
Transition Frequency: 2MHz
Surface Mount Mounting
Product Advantages
High power handling capability
Compact DPAK package
Wide operating temperature range
Suitable for various power electronics applications
Key Technical Parameters
Voltage, Current, Power, and Frequency Ratings
Transistor Type: NPN
Quality and Safety Features
RoHS3 Compliant
Compatibility
Standard DPAK footprint and pinout
Application Areas
Power electronics
Motor drives
Switching power supplies
Industrial controls
Product Lifecycle
Current product, no discontinuation known
Key Reasons to Choose This Product
High power capability in compact DPAK package
Wide operating temperature range
Good electrical performance characteristics
Suitable for a variety of power electronics applications
RoHS3 compliance for environmental safety