NJVMJD117T4G - onsemi

Manufacturer Part Number

NJVMJD117T4G

Manufacturer

onsemi

Introduction

The NJVMJD117T4G is a PNP Darlington transistor from onsemi. It is a high-voltage, high-current transistor suitable for a variety of power switching and amplification applications.

Product Features and Performance

Operating temperature range of -65°C to 150°C

Maximum power dissipation of 1.75W

Collector-emitter breakdown voltage of 100V

Maximum collector current of 2A

Maximum collector cutoff current of 20A

Low collector-emitter saturation voltage of 3V at 40mA, 4A

High DC current gain of 1000 at 2A, 3V

Transition frequency of 25MHz

Product Advantages

High voltage and current handling capability

Excellent power efficiency due to low saturation voltage

Suitable for a wide range of power switching and amplification applications

Surface mount package for compact design

Key Technical Parameters

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

RoHS compliance: ROHS3 Compliant

Quality and Safety Features

Robust design for reliable performance

Complies with RoHS3 environmental standards

Compatibility

Suitable for a wide range of power electronics applications, including motor drives, power supplies, and industrial control systems.

Application Areas

Power switching and amplification

Motor control

Industrial automation

Power supplies

Product Lifecycle

Current production model, no indication of discontinuation

Replacement or upgrade options may be available from onsemi

Key Reasons to Choose This Product

High voltage and current handling capability

Excellent power efficiency

Wide operating temperature range

Surface mount packaging for compact designs

Robust and reliable performance

RoHS compliance for environmentally friendly applications