Manufacturer Part Number
NJVMJB42CT4G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) Single
Product Features and Performance
RoHS3 Compliant
DPAK Package
Operating Temperature: -65°C to 150°C
Power Rating: 2W
Collector-Emitter Breakdown Voltage: 100V
Collector Current (Max): 6A
Collector Cutoff Current (Max): 700A
Collector-Emitter Saturation Voltage: 1.5V @ 600mA, 6A
DC Current Gain: 15 @ 3A, 4V
Transition Frequency: 3MHz
Product Advantages
Compact DPAK surface mount package
High power and current handling capability
Wide operating temperature range
High breakdown voltage
Key Technical Parameters
Package: TO-263-3, DPak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Quality and Safety Features
RoHS3 Compliant
Compatibility
Compatible with various electronic circuit designs requiring high-power PNP bipolar junction transistors
Application Areas
Power amplifiers
Switching circuits
Motor control
Industrial automation
Automotive electronics
Product Lifecycle
This product is an active, in-production device.
Key Reasons to Choose This Product
High power and current handling capabilities
Wide operating temperature range
Compact DPAK surface mount package
High breakdown voltage for enhanced reliability
RoHS3 compliance for environmental responsibility
NJVMJB41CT4GFairchild SemiconductorTRANS NPN D2PAK