Manufacturer Part Number
NJV4030PT1G
Manufacturer
onsemi
Introduction
The NJV4030PT1G is a high-performance PNP bipolar junction transistor (BJT) in a SOT-223 (TO-261) package.
Product Features and Performance
Wide operating temperature range of -55°C to 150°C
Low collector-emitter saturation voltage (VCE(sat)) of 500 mV at 300 mA, 3 A
High current gain (hFE) of 200 minimum at 1 A, 1 V
High transition frequency (fT) of 160 MHz
Low collector cutoff current (ICBO) of 100 nA maximum
Product Advantages
Suitable for high-power switching and amplification applications
Excellent thermal management in the compact SOT-223 package
Robust design for reliable operation
Key Technical Parameters
Power rating: 2 W
Collector-emitter breakdown voltage (VCEO): 40 V
Collector current (IC): 3 A maximum
Collector cutoff current (ICBO): 100 nA maximum
Quality and Safety Features
RoHS3 compliant
Meets industry quality and reliability standards
Compatibility
Compatible with standard SOT-223 (TO-261) footprint and mounting
Application Areas
High-power switching circuits
Amplifiers
Power supplies
Motor control
Industrial electronics
Product Lifecycle
Current product offering, no indication of discontinuation
Replacement or upgrade options available from onsemi
Key Reasons to Choose
Excellent performance and reliability for high-power applications
Compact and thermally efficient SOT-223 package
Robust design for industrial and harsh environments
Proven technology and reliability from onsemi
