Manufacturer Part Number
NJVMJB44H11T4G
Manufacturer
onsemi
Introduction
High-voltage, high-current NPN silicon power transistor for use in power amplifiers, power supplies, and switching applications
Product Features and Performance
Capable of handling high power and current
High-speed switching performance
Withstands high voltage up to 80V
Collector current up to 10A
Power dissipation up to 2W
Transition frequency of 50MHz
Junction temperature range of -55°C to 150°C
Product Advantages
Robust and reliable performance
Versatile applications in power electronics
Efficient power handling and switching
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 80V
Collector Current (IC): 10A
Power Dissipation (PD): 2W
Transition Frequency (fT): 50MHz
Operating Temperature Range: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
Meets industry safety and reliability standards
Compatibility
Compatible with a wide range of power electronics applications
Application Areas
Power amplifiers
Power supplies
Switching circuits
Automotive electronics
Industrial control systems
Product Lifecycle
Current production, no plans for discontinuation
Replacement and upgrade options available
Key Reasons to Choose This Product
Robust and reliable high-power performance
Efficient power handling and switching
Wide operating temperature range
Versatile applications in power electronics
Meets industry safety and reliability standards