Manufacturer Part Number
NJVMJB45H11T4G
Manufacturer
onsemi
Introduction
High-power PNP bipolar junction transistor (BJT)
Designed for power switching and amplification applications
Product Features and Performance
Capable of handling up to 10A of collector current
Supports operating temperatures from -55°C to 150°C
High current gain (hFE) of 40 or more at 4A collector current
High transition frequency of 40MHz
Low collector-emitter saturation voltage (VCE(sat)) of 1V at 8A collector current
Product Advantages
Robust and reliable performance
Suitable for high-power switching and amplification
Compact DPAK (TO-263) package for efficient heat dissipation
RoHS3 compliant for environmental compliance
Key Technical Parameters
Max Collector-Emitter Voltage: 80V
Max Collector Current: 10A
Power Dissipation: 2W
Transistor Type: PNP
Quality and Safety Features
RoHS3 compliant
Meets industry quality and reliability standards
Compatibility
Compatible with a wide range of power electronics and amplifier applications
Application Areas
Power supplies
Motor drives
Servo amplifiers
Audio amplifiers
Industrial control systems
Product Lifecycle
This product is currently in active production and not nearing discontinuation.
Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
High-power handling capability up to 10A
Excellent thermal performance with wide operating temperature range
High current gain and transition frequency for efficient power switching
Compact and thermally efficient DPAK package
RoHS3 compliance for environmental responsibility
Proven reliability and quality from a leading semiconductor manufacturer
NJVMJB41CT4GFairchild SemiconductorTRANS NPN D2PAK