Manufacturer Part Number
NJVMJD253T4G-VF01
Manufacturer
onsemi
Introduction
This is a PNP bipolar junction transistor (BJT) from onsemi, designed for use in automotive and industrial applications.
Product Features and Performance
High collector-emitter breakdown voltage of 100V
Maximum collector current of 4A
Low collector-emitter saturation voltage of 600mV at 100mA, 1A
Minimum DC current gain of 40 at 200mA, 1V
Transition frequency of 40MHz
Wide operating temperature range of -65°C to 150°C
RoHS3 compliant
Product Advantages
Robust design for demanding automotive and industrial environments
High power handling capability
Low on-state voltage drop for efficient power conversion
Suitable for high-frequency switching applications
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 100V
Current Collector (Ic) (Max): 4A
Current Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
Frequency Transition: 40MHz
Quality and Safety Features
AEC-Q101 qualified for automotive applications
ROHS3 compliant
Packaged in DPAK (TO-252-3) surface-mount package
Compatibility
This transistor is compatible with a wide range of electronic circuits and systems, particularly in automotive and industrial applications.
Application Areas
Power management circuits
Motor control systems
Industrial automation and control
Automotive electronics
Product Lifecycle
This product is currently in active production and is not nearing discontinuation. Replacement or upgrade options may be available from onsemi.
Key Reasons to Choose This Product
High power handling and efficiency for demanding applications
Robust design for automotive and industrial environments
Excellent electrical performance with low saturation voltage and high current gain
Suitable for high-frequency switching applications
AEC-Q101 qualified and RoHS3 compliant for reliability and safety
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