Manufacturer Part Number
NJVMJD31T4G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT)
Single Transistor
Product Features and Performance
High voltage and high current capability
Fast switching speed up to 3MHz
Low collector-emitter saturation voltage
Efficient power dissipation up to 1.56W
Product Advantages
Reliable and robust performance
Compact and space-saving DPAK package
Suitable for a wide range of applications
Key Technical Parameters
Voltage: 40V max collector-emitter breakdown voltage
Current: 3A max collector current
Power: 1.56W max power dissipation
Temperature: -65°C to 150°C operating temperature range
Gain: Minimum DC current gain of 10 at 3A, 4V
Quality and Safety Features
RoHS3 compliant
Reliable DPAK package
Compatibility
Surface mount package
Suitable for various electronic circuits and applications
Application Areas
Power amplifiers
Switching circuits
Motor controls
Industrial electronics
Product Lifecycle
Currently available product
No discontinuation plans announced
Key Reasons to Choose This Product
High performance and efficiency
Robust and reliable operation
Compact and space-saving package
Suitable for a wide range of applications
Compliance with RoHS3 standards
