Manufacturer Part Number
NJVMJD41CT4G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) Single
Product Features and Performance
RoHS3 Compliant
Surface Mount Packaging (DPAK)
Automotive Grade, AEC-Q101 Qualified
Operating Temperature up to 150°C
Power Rating up to 1.75W
Collector-Emitter Breakdown Voltage up to 100V
Collector Current up to 6A
Collector Cutoff Current up to 50A
Low Collector-Emitter Saturation Voltage
DC Current Gain (hFE) from 30
Transition Frequency up to 3MHz
Product Advantages
High power handling capability
Rugged and reliable automotive-grade design
Wide operating temperature range
Suitable for high-current switching applications
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 100V
Collector Current (Max): 6A
Collector Cutoff Current (Max): 50A
Collector-Emitter Saturation Voltage: 1.5V @ 600mA, 6A
DC Current Gain (hFE): 30 @ 300mA, 4V
Transition Frequency: 3MHz
Quality and Safety Features
RoHS3 Compliant
AEC-Q101 Qualified for Automotive Applications
Compatibility
Surface Mount (DPAK) Package
Suitable for high-power switching applications
Application Areas
Automotive Electronics
Industrial Power Supplies
Motor Controls
Switching Regulators
Power Amplifiers
Product Lifecycle
Current production model
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
High power handling and current capability
Automotive-grade reliability and ruggedness
Wide operating temperature range
Suitable for high-current, high-frequency switching applications
RoHS3 compliance for environmental responsibility