Manufacturer Part Number
NJVMJD44H11T4G
Manufacturer
onsemi
Introduction
This is a bipolar junction transistor (BJT) from onsemi's NJVMJD44 series, designed for automotive and industrial applications.
Product Features and Performance
Capable of handling up to 8A of collector current
High breakdown voltage of 80V
Wide operating temperature range of -55°C to 150°C
Low saturation voltage of 1V @ 400mA, 8A
High current gain of 60 @ 2A, 1V
High transition frequency of 85MHz
Product Advantages
Robust and reliable design for demanding automotive and industrial environments
High power handling and voltage capability
Excellent thermal performance and stability
Key Technical Parameters
Collector-Emitter Breakdown Voltage (Max): 80V
Collector Current (Max): 8A
Collector Cutoff Current (Max): 1A
DC Current Gain (Min): 60 @ 2A, 1V
Transition Frequency: 85MHz
Quality and Safety Features
RoHS3 compliant
Automotive qualified to AEC-Q101 standard
DPAK package for efficient heat dissipation
Compatibility
This transistor is compatible with a wide range of automotive and industrial electronic systems.
Application Areas
Automotive electronics (e.g., engine control, power windows, lighting)
Industrial motor control and power supplies
General-purpose power switching and amplification
Product Lifecycle
This product is still in active production and supported by onsemi. No discontinuation or replacement plans have been announced.
Key Reasons to Choose This Product
Robust automotive and industrial-grade design for reliable performance in demanding applications
High power handling and voltage capability for efficient power management
Excellent thermal performance and stability for long-term reliability
Automotive qualification to AEC-Q101 standard for enhanced quality and safety
Wide operating temperature range for versatile usage
