Manufacturer Part Number
NJVMJD50T4G
Manufacturer
onsemi
Introduction
Bipolar Junction Transistor (BJT) in DPAK package
Designed for high-voltage, high-power switching and amplification applications
Product Features and Performance
Operating temperature range: -65°C to 150°C
Maximum power dissipation: 1.56 W
Collector-Emitter Breakdown Voltage: 400 V (max)
Collector Current: 1 A (max)
Collector Cutoff Current: 200 μA (max)
Collector-Emitter Saturation Voltage: 1 V @ 200 mA, 1 A
DC Current Gain (hFE): 30 (min) @ 300 mA, 10 V
Transition Frequency: 10 MHz
Product Advantages
High voltage and power handling capability
Robust DPAK package for surface mount applications
Suitable for high-power switching and amplification circuits
Key Technical Parameters
Bipolar Junction Transistor (NPN)
Surface mount DPAK package
Tape and reel packaging
Quality and Safety Features
RoHS3 compliant
Designed for reliable and safe operation
Compatibility
Compatible with a wide range of high-voltage, high-power electronic circuits and systems
Application Areas
Power supplies
Motor drives
Lighting control
Industrial electronics
Automotive electronics
Product Lifecycle
This product is currently in active production and availability.
Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
High voltage and power handling capability
Robust DPAK package for reliable surface mount applications
Suitable for a wide range of high-power switching and amplification circuits
RoHS3 compliance for environmentally friendly usage
Proven reliability and performance from a reputable manufacturer