Manufacturer Part Number
NJVMJD44H11RLG-VF01
Manufacturer
onsemi
Introduction
High-voltage, high-current NPN bipolar junction transistor (BJT)
Suitable for switch-mode power supplies, motor drives, and other power electronics applications
Product Features and Performance
Low collector-emitter saturation voltage (VCEsat)
High DC current gain (hFE)
High transition frequency (fT)
Wide operating temperature range (-55°C to 150°C)
High power handling capability (1.75W)
Product Advantages
Excellent efficiency and thermal performance
Reliable operation in high-power, high-current applications
Suitable for compact, high-density power electronic designs
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 80V
Collector Current (IC): 8A
Collector-Emitter Saturation Voltage (VCEsat): 1V @ 400mA, 8A
DC Current Gain (hFE): 40 @ 4A, 1V
Transition Frequency (fT): 85MHz
Quality and Safety Features
RoHS3 compliant
Reliable and durable DPAK package
Compatibility
Suitable for surface mount applications
Application Areas
Switch-mode power supplies
Motor drives
Power electronics equipment
Product Lifecycle
Current production, no plans for discontinuation
Replacement and upgrade options available from onsemi
Key Reasons to Choose This Product
High power handling and efficiency for demanding power electronics applications
Reliable operation over wide temperature range
Compact and thermally efficient DPAK package
Proven quality and safety from onsemi
