Manufacturer Part Number
NJVMJD44H11RLG
Manufacturer
onsemi
Introduction
Discrete Semiconductor Transistor - Bipolar (BJT) - Single
Product Features and Performance
High power handling capability of 1.75W
Wide operating temperature range of -55°C to 150°C
High voltage rating of 80V Collector-Emitter Breakdown Voltage
High current rating of 8A Collector Current (Max)
Good saturation voltage characteristics of 1V @ 400mA, 8A
High DC current gain of 60 @ 2A, 1V
High transition frequency of 85MHz
Product Advantages
Suitable for automotive and industrial applications
Excellent electrical performance and reliability
Compact DPAK surface mount package
Key Technical Parameters
Power Rating: 1.75W
Collector-Emitter Breakdown Voltage: 80V
Collector Current (Max): 8A
Collector Cutoff Current (Max): 1A
Vce Saturation Voltage: 1V @ 400mA, 8A
DC Current Gain: 60 @ 2A, 1V
Transition Frequency: 85MHz
Quality and Safety Features
AEC-Q101 qualified for automotive applications
RoHS3 compliant
Compatibility
TO-252-3, DPak (2 Leads + Tab), SC-63 package
Surface mount configuration
Application Areas
Automotive electronics
Industrial equipment
Power supplies
Switching circuits
Product Lifecycle
This product is currently in production
Replacement or upgrade options may be available from the manufacturer
Key Reasons to Choose This Product
High power handling and voltage/current capabilities
Excellent electrical performance and reliability
Wide operating temperature range
Compact and easy to integrate surface mount package
Automotive and industrial grade quality