Manufacturer Part Number
NJVMJD350T4G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT), Single
Product Features and Performance
RoHS3 Compliant
DPAK Packaging
Operating Temperature Range: -65°C to 150°C
Maximum Power Dissipation: 1.56W
Maximum Collector-Emitter Breakdown Voltage: 300V
Maximum Collector Current: 500mA
Maximum Collector Cutoff Current: 100A
Collector-Emitter Saturation Voltage: 1V @ 10mA, 100mA
Minimum DC Current Gain (hFE): 30 @ 50mA, 10V
Transition Frequency: 10MHz
Product Advantages
Robust and reliable performance
Efficient power handling
Wide operating temperature range
Compact and space-saving DPAK package
Key Technical Parameters
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Quality and Safety Features
RoHS3 Compliant
Compatibility
Suitable for a wide range of electronic applications
Application Areas
Power amplifiers
Switching circuits
Voltage regulators
Motor control
Industrial electronics
Product Lifecycle
Currently available
No known discontinuation plans
Replacement or upgrade options may be available
Key Reasons to Choose This Product
Reliable and robust performance
Efficient power handling capabilities
Wide operating temperature range
Compact and space-saving DPAK package
Compliance with RoHS3 regulations