Manufacturer Part Number
NJVMJD45H11T4G
Manufacturer
onsemi
Introduction
The NJVMJD45H11T4G is a PNP bipolar junction transistor (BJT) in a DPAK package, designed for automotive and industrial applications.
Product Features and Performance
Operating temperature range of -55°C to 150°C
Maximum collector current (Ic) of 8A
Maximum collector-emitter breakdown voltage (VCEO) of 80V
Transition frequency (fT) of 90MHz
DC current gain (hFE) of 60 min. at 2A, 1V
1V max. collector-emitter saturation voltage (VCE(sat)) at 400mA, 8A
75W maximum power dissipation
Product Advantages
Robust automotive-grade design
High current-handling capability
Fast switching performance
Compact DPAK surface-mount package
Key Technical Parameters
Collector-emitter breakdown voltage (VCEO): 80V
Collector current (IC): 8A max.
Collector cutoff current (ICBO): 1A max.
DC current gain (hFE): 60 min. at 2A, 1V
Transition frequency (fT): 90MHz
Power dissipation: 1.75W max.
Quality and Safety Features
AEC-Q101 qualified for automotive applications
RoHS3 compliant
Compatibility
Can be used as a replacement or upgrade for similar PNP BJT transistors in automotive and industrial designs
Application Areas
Automotive electronics
Industrial control and power systems
Switching and amplifier circuits
Product Lifecycle
This product is currently in active production and not nearing discontinuation
Replacement or upgraded models may become available in the future as technology evolves
Several Key Reasons to Choose This Product
Robust automotive-grade design for reliable performance in harsh environments
High current-handling capability for demanding power applications
Fast switching performance for efficient circuit operation
Compact DPAK surface-mount package for space-constrained designs
AEC-Q101 qualification and RoHS3 compliance for quality and safety assurance
