Manufacturer Part Number
NJVMJD45H11T4G-VF01
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT)
Single Transistor
Product Features and Performance
Power Rating: 1.75 W
Collector-Emitter Breakdown Voltage (Max): 80 V
Collector Current (Max): 8 A
Collector Cutoff Current (Max): 1 A
Collector-Emitter Saturation Voltage (Max): 1 V @ 400 mA, 8 A
DC Current Gain (hFE) (Min): 40 @ 4 A, 1 V
Transition Frequency: 90 MHz
Operating Temperature Range: -55°C to 150°C
Product Advantages
Compact DPAK (TO-252-3) surface mount package
High power and current handling capabilities
Suitable for a wide range of power electronics applications
Key Technical Parameters
Package: DPAK (TO-252-3), 2 Leads + Tab
Transistor Type: PNP
Mounting Type: Surface Mount
Quality and Safety Features
RoHS3 compliant
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Power supplies
Motor drivers
Amplifiers
Switching circuits
Product Lifecycle
This product is an active and currently available part from onsemi.
Key Reasons to Choose This Product
High power and current handling capabilities
Compact and efficient DPAK package
Wide operating temperature range
RoHS3 compliance for environmental responsibility
Suitable for a variety of power electronics applications
